can u tell me the construction of the tunnel diode?

Question

i need the detailed construction of the tunnel diode
with VI charactristics
please give me contact details whoever gives the answer for the qustion

Answer 1

The above answer reasonably descirbes the effect. Essentially the probability of tunneling is greatly increased when a state is available for the electron on the P side of the device. When the device is biased correctly a very large barrier will exist for the electron between the p type and n type regions. This barrier can obviously be overcome by further increasing the bias. The cool effect with the tunnel diode is that if instead of increasing the bias till you get a flat band you simply bias the device so the conduction band and valence band are perfectly alligned the probability of tunneling will increase drastically. This alignment is a type of broken band energy band diagram.

As you can see in this picture:
http://researchnews.osu.edu/archive/energy_bands.jpg
with a heterojunction device a tunnel diode can be fabricated over a distance of 5nm and have the bands perfectly aligned. There is still a very large barrier but the electron will simply tunnel through.

Furthermore this diode can be used in a typical LCR circuit as a negative resistance allowing the circuit to have absolutely no damping factor. This was previously unrealized and has made possible the invention of EXTREMELY fast resonantors.

Answer 2

Look here

http://en.wikipedia.org/wiki/Tunnel_diode