Bipolar Junction Transistor?

Question

where can i find detailed info on characteristics and properties of a bipolar junction transistor on the net?

Answer 1

A bipolar junction transistor (BJT) is a type of transistor. It is a three-terminal device constructed of doped semiconductor material and may be used in amplifying or switching applications. Bipolar transistors are so named because their operation involves both electrons and holes.

Although a small part of the base–emitter current is carried by the majority carriers, the main current is carried by minority carriers in the base, and so BJTs are classified as 'minority-carrier' devices.
Introduction

An NPN transistor can be considered as two diodes with a shared anode region. In typical operation, the emitter–base junction is forward biased and the base–collector junction is reverse biased. In an NPN transistor, for example, when a positive voltage is applied to the base–emitter junction, the equilibrium between thermally generated carriers and the repelling electric field of the depletion region becomes unbalanced, allowing thermally excited electrons to inject into the base region. These electrons wander (or "diffuse") through the base from the region of high concentration near the emitter towards the region of low concentration near the collector. The electrons in the base are called minority carriers because the base is doped p-type which would make holes the majority carrier in the base.

The base region of the transistor must be made thin, so that carriers can diffuse across it in much less time than the semiconductor's minority carrier lifetime, to minimize the percentage of carriers that recombine before reaching the collector–base junction. The collector–base junction is reverse-biased, so little electron injection occurs from the collector to the base, but electrons that diffuse through the base towards the collector are swept into the collector by the electric field in the depletion region of the collector–base junction.
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Voltage, current, and charge control

The collector–emitter current can be viewed as being controlled by the base–emitter current (current control), or by the base–emitter voltage (voltage control). These views are related by the current–voltage relation of the base–emitter junction, which is just the usual exponential current–voltage curve of a p-n junction (diode).

The physical explanation for collector current is the amount of minority-carrier charge in the base region. Detailed models of transistor action, such as the Gummel–Poon model, account for this charge explicitly to explain transistor behavior more exactly. The charge-control view easily handles photo-transistors, where minority carriers in the base region are created by the absorption of photons, and handles the dynamics of turn-off, or recovery time, which depends on charge in the base region recombining. However, since base charge is not a signal that is visible at the terminals, the current- and voltage-control views are usually used in circuit design and analysis.

In linear circuit design, the current-control view is often preferred, since it is approximately linear. That is, the collector current is approximately 'beta' times the base current. The voltage-control model requires an exponential function to be taken into account.
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Transistor 'alpha' and 'beta'

The proportion of electrons able to cross the base and reach the collector is a measure of the BJT efficiency. The heavy doping of the emitter region and light doping of the base region cause many more electrons to be injected from the emitter into the base than holes to be injected from the base into the emitter. The base current is the sum of the holes injected into the emitter and the electrons that recombine in the base—both small proportions of the emitter to collector current. Hence, a small change of the base current can translate to a large change in electron flow between emitter and collector. The ratio of these currents Ic/Ib, called the current gain, and represented by β or hfe, is typically greater than 100 for transistors. Another important parameter is the base transport factor, αT-. The base transport factor is the proportion of minority carriers injected from the emitter that diffuse across the base and are swept across the base–collector junction without recombining.

Answer 2

Base Transport Factor

Answer 3

If your looking for properties of a specific BJT, usually you can find them on the datasheet.

Goto Google or Yahoo, and just type in the part number. Usually, it's #1 or 2 on the list.

Answer 4

I find this page
http://www.mcmanis.com/chuck/Robotics/tutorial/h-bridge/bjt_theory.html
insofar good, as it explains a "normal" transistor, and the difference of a BJT.
If you need "heavy reading", the go to
http://www.ece.uci.edu/docs/hspice/hspice_2001_2-108.html

Answer 5

read a gud electronics book such as that of
a p malvino...
godse and bakshi..
etc etc

u can find all the necessary things..

if u dont wanna purchase, i can write it... come on msger..

Answer 6

go to the google and type "study of bjt" , it will give u numerous page,

Answer 7

The same question pops up again

Answer 8

A bipolar junction transistor (bipolar transistor or BJT) is a type of transistor that uses both electron and hole charge carriers. In contrast, unipolar transistors, such as field-effect transistors, only use one kind of charge carrier. For their operation, BJTs use two junctions between two semiconductor types, n-type and p-type.

BJTs are manufactured in two types, NPN and PNP, and are available as individual components, or fabricated in integrated circuits, often in large numbers. The basic function of a BJT is to amplify current. This allows BJTs to be used as amplifiers or switches, giving them wide applicability in electronic equipment, including, computers, televisions, mobile phones, audio amplifiers, industrial control, and radio transmitters.

Function:

BJTs come in two types, or polarities, known as PNP and NPN based on the doping types of the three main terminal regions. An NPN transistor comprises two semiconductor junctions that share a thin p-doped anode region, and a PNP transistor comprises two semiconductor junctions that share a thin n-doped cathode region.

Charge flow in a BJT is due to diffusion of charge carriers across a junction between two regions of different charge concentrations. The regions of a BJT are called emitter, collector, and base.[note 1] A discrete transistor has three leads for connection to these regions. Typically, the emitter region is heavily doped compared to the other two layers, whereas the majority charge carrier concentrations in base and collector layers are about the same. By design, most of the BJT collector current is due to the flow of charges injected from a high-concentration emitter into the base where there are minority carriers that diffuse toward the collector, and so BJTs are classified as minority-carrier devices.

In typical operation, the base–emitter junction is forward biased, which means that the p-doped side of the junction is at a more positive potential than the n-doped side, and the base–collector junction is reverse biased. In an NPN transistor, when positive bias is applied to the base–emitter junction, the equilibrium is disturbed between the thermally generated carriers and the repelling electric field of the n-doped emitter depletion region. This allows thermally excited electrons to inject from the emitter into the base region. These electrons diffuse through the base from the region of high concentration near the emitter towards the region of low concentration near the collector. The electrons in the base are called minority carriers because the base is doped p-type, which makes holes the majority carrier in the base.

To minimize the percentage of carriers that recombine before reaching the collector–base junction, the transistor's base region must be thin enough that carriers can diffuse across it in much less time than the semiconductor's minority carrier lifetime. In particular, the thickness of the base must be much less than the diffusion length of the electrons. The collector–base junction is reverse-biased, and so little electron injection occurs from the collector to the base, but electrons that diffuse through the base towards the collector are swept into the collector by the electric field in the depletion region of the collector–base junction. The thin shared base and asymmetric collector–emitter doping are what differentiates a bipolar transistor from two separate and oppositely biased diodes connected in series.

Regions of operation:

Bipolar transistors have five distinct regions of operation, defined by BJT junction biases.

Forward-active (or simply, active): The base–emitter junction is forward biased and the base–collector junction is reverse biased. Most bipolar transistors are designed to afford the greatest common-emitter current gain, βF, in forward-active mode. If this is the case, the collector–emitter current is approximately proportional to the base current, but many times larger, for small base current variations.
Reverse-active (or inverse-active or inverted): By reversing the biasing conditions of the forward-active region, a bipolar transistor goes into reverse-active mode. In this mode, the emitter and collector regions switch roles. Because most BJTs are designed to maximize current gain in forward-active mode, the βF in inverted mode is several times smaller (2–3 times for the ordinary germanium transistor). This transistor mode is seldom used, usually being considered only for failsafe conditions and some types of bipolar logic. The reverse bias breakdown voltage to the base may be an order of magnitude lower in this region.
Saturation: With both junctions forward-biased, a BJT is in saturation mode and facilitates high current conduction from the emitter to the collector (or the other direction in the case of NPN, with negatively charged carriers flowing from emitter to collector). This mode corresponds to a logical "on", or a closed switch.
Cutoff: In cutoff, biasing conditions opposite of saturation (both junctions reverse biased) are present. There is very little current, which corresponds to a logical "off", or an open switch.
Avalanche breakdown region

Applications:

The BJT remains a device that excels in some applications, such as discrete circuit design, due to the very wide selection of BJT types available, and because of its high transconductance and output resistance compared to MOSFETs. The BJT is also the choice for demanding analog circuits, especially for very-high-frequency applications, such as radio-frequency circuits for wireless systems. Bipolar transistors can be combined with MOSFETs in an integrated circuit by using a BiCMOS process of wafer fabrication to create circuits that take advantage of the application strengths of both types of transistor.

http://www.electrikals.com/

Answer 9

This might be a good place to start
http://eecs.evansville.edu/DataSheets.htm

Answer 10

try