vabrication for MIS?

Answer 1

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Answer 2

A NEW INSULATING MATERIAL FOR THE FABRICATION OF InP
BASED METAL-INSULATOR-SEMICONDUCTOR DEVICES
R. R. Sumathi*
Crystal Growth Centre, Anna University, Chennai (Madras) -- 600 025, India.
Presently at: Physics Institute, Justus Liebig University, D--35392 Giessen, Germany
Insulating layers play crucial role on metal-insulator-semiconductor (MIS) structures. Finding
a more suitable insulating material and/or layers with high resistivity and high stability is
rather demanding. Good insulating layers for indium phosphide (InP) are very much essential
since InP based MIS structures find wide and potential applications in the modern high speed,
high power as well as optical devices because of its high values of saturation current,
breakdown voltage, thermal conductivity and radiation resistance. Generally, realisation of an
insulating layer on InP has been carried out mainly by two ways. They are: (i) deposition of
the insulating layers such as SiO 2, Si3N4, Al2O3 etc., using thermal evaporation or sputtering
methods (ii) growth of native oxides on InP. High surface state density (of the order of 1012
eV-1 cm-2, the thermal damage caused during the deposition and/or sputtering is detrimental in
the first process. Instability upon exposure to moisture and/or a slightly elevated temperature
is the typical problem encountered with the native oxides grown on InP and moreover their
oxide resistivity is limited to 1013 W cm. Hence, with searching of a better insulating material
and also to overcome the problems relating to the insulator deposition of InP, effort has been
made to find a suitable insulating material as well as a simple method in which materials
could be deposited at room temperature with less cost effective. In this present work, barium
titanate (BaTiO 3, a good dielectric material has been proposed as a new insulating material for
InP based MIS structures. BaTiO 3 thin films have been deposited on InP substrates using solgel
technique through organic precursor route. The precursor solution was coated on InP
substrate by spin coating method. As-deposited BaTiO 3 films are amorphous in nature and
post-deposition annealing yields polycrystalline films. XPS analysis confirms the formation
and composition of BaTiO 3 layer on InP. The MIS structures were fabricated on the BaTiO 3
deposited InP samples and they show better capacitance-voltage characteristics. A minimum
hysteresis width of 0.5 V and a minimum flat band voltage shift of 0.75 V have been obtained
for Au/BaTiO3/InP MIS structures. It indicates a high resistivity and good stability of the
insulating layer on InP. Furthermore, a reduced surface state density value of as low as 6x1010
cm-2 eV-1 has been achieved and is very much less when compared to other conventional
deposited insulators. DLTS measurements were carried out to study the defects incorporation
and only one interface trap has been observed at 0.55 eV below the conduction band. The
characteristics and properties of this new insulating layer for InP MIS device applications will
be presented in detail.