information on material improvement processes?

Answer 1

A matrix study was carried out to optimize a process whereby chemical vapor deposited silicon on sapphire is modified by the repeated application of ion implantation and solid phase epitaxial regrowth (DSPEG) induced by furnace annealing. The matrix consisted of varying the fluences for each implantation. It is shown that if the amorphous layer does not extend up to the interface, a concentration of stacking faults near the interface remains from step 1. These residual defects are significantly reduced during step 2 of the DSPEG process. The defect density cross-section product is found to monotonically decrease as a function of the overlap of the two regions formed by ion implantation. A major reduction in defect density is observed for fluences where the two amorphous regions terminate within about 200 A of each other.

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