what is the definition for built in potential for p-n junction??

Answer 1

The built-in potential for a p-n junction is given by

ø = Vt*ln[(na * nd)/ni^2]

Vt = kT/e = 25mV @ 25ºC

na = acceptor dopant carrier concentration
nd = donor dopant carrier concentration
ni = intrinsic carrier concentration

The built-in potential arises from diffusion of mobile charge carriers from the p-region into the n-region and vice-versa. Since the regions are electrically neutral prior to carrier migration, the "missing" and the "new" carriers (of the opposite sign) create a region of charge (space-charge region) at the junction. This migration continues until the charge is sufficient to prevent further diffusion. The region around the junction is then depleted of mobile carriers (depletion region). The potential built up by the space charge is the built-in potential of the junction.

Answer 2

Built In Potential

Answer 3

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what is the definition for built in potential for p-n junction??