Some people said that ECR is more applicable to the case while the uppermost layer is of metal; on the other hand, ICP is used while the uppermost layer is of dielectric. Besides that, if correct, is there any other difference between them for the etching application?
2006-09-06 22:46:54 · 2 answers · asked by Samuel 2 in Science & Mathematics ➔ Physics
These are two popular ways of generating a plasma in a ion etching machine. In an ICP (Inductively Coupled Plasma) the plasma is generated by an electric field. In an ECR (Electron cyclotron resonance) the plasma is generated by a magnetic field. After the plasma is generated it is brought to the etch sample surface by a second electric field. The ICP and ECR control the ion density and the second field controls the ion acceleration. Since the ICP and ECR serve the same purpose they can both be used to etch metals and dielectrics. ICP is more popular of the two. It is supposed to be easier to maintain.
2006-09-07 17:52:09 · answer #1 · answered by Anonymous · 0⤊ 0⤋
Go to these links from wikipedia may helps you:
http://en.wikipedia.org/wiki/ICP
http://en.wikipedia.org/wiki/ECR
Good luck.
2006-09-07 05:52:57 · answer #2 · answered by Anry 7 · 0⤊ 0⤋