Does anybody know abt. spintronics? Can anybody guide me to have a bright future in spintronics?

Answer 1

Study physics. Focus on solid state physics. Decide whether you want to become a theoretical or experimental physicist.Try to get in contact with your local work group on that topic early, e.g. when undergraduated, try to get a job as assistant to attract some attention of your professor. Read the usual journals (PRL, PRB, cond-mat, ...) to be up to date with current developments, discuss them in seminars, science clubs, ... Go to conferences, summer schools, ... to get in contact with the global community. Be not afraid to ask, even when the lecturer is a nobel prize winner. Go for one or two semester to a foreign group. Start your master early. Apply for a PhD study in the work group of one of the "big shots" (You'll know them by then!). Be prepared to lose some social contacts, physics is a time consuming subject and you should take the chance when a good opportunity is offered to you, but you have to move away from your home town for that.

Good luck!

Answer 2

Spintronics (a neologism for "spin-based electronics"), also known as magnetoelectronics, is an emergent technology which exploits the quantum propensity of electrons to spin as well as making use of their charge state. The spin itself is manifested as a detectable weak magnetic energy state characterised as "spin up" and "spin down".

In order to make a spintronic device, the primary requirement is to have a system that can generate a current of spin polarised electrons, and a system that is sensitive to the spin polarization of the electrons. Most devices also have a unit in between that changes the current of electrons depending on the spin states.

The simplest method of generating a spin polarised current is to inject the current through a ferromagnetic material. The most common application of this effect is a giant magnetoresistance (GMR) device. A typical GMR device consists of at least two layers of ferromagnetic materials separated by a spacer layer. When the two magnetization vectors of the ferromagnetic layers are aligned, then an electrical current will flow freely, whereas if the magnetization vectors are antiparrallel then the resistance of the system is higher. Two variants of GMR have been applied in devices, current-in-plane where the electric current flows parallel to the layers and current-perpendicular-to-the-plane where the electric current flows in a direction perpendicular to the layers.

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Applications
Spintronic devices are used in the field of mass-storage devices; recently (in 2002) IBM scientists announced that they could compress massive amounts of data into a small area, at approximately one trillion bits per square inch (1.5 Gbit/mm²) or roughly 1 TB on a single sided 3.5" diameter disc. The storage density of hard drives is rapidly increasing along an exponential growth curve known as Kryder's Law. The doubling period for the areal density of information storage is twelve months, much shorter than Moore's Law, which observes that the number of transistors in an integrated circuit doubles every eighteen months. Also the hard disk drives use a spin effect to function, the Giant magnetoresistive effect (see below).

The most successful spintronic device to date is the spin valve. This device utilizes a layered structure of thin films of magnetic materials, which changes electrical resistance depending on applied magnetic field direction. In a spin valve, one of the ferromagnetic layers is "pinned" so its magnetization direction remains fixed and the other ferromagnetic layer is "free" to rotate with the application of a magnetic field. When the magnetic field aligns the free layer and the pinned layer magnetization vectors, the electrical resistance of the device is at its minimum. When the magnetic field causes the free layer magnetization vector to rotate in a direction antiparallel to the pinned layer magnetization vector, the electrical resistance of the device increases due to spin dependent scattering. The magnitude of the change, (Antiparallel Resistance - Parallel Resistance) / Parallel Resistance x 100% is called the GMR ratio. Devices have been demostrated with GMR ratios as high as 200% with typical values greater than 10%. This is a vast improvement over the anisotropic magnetoresistance effect in single layer materials which is usually less than 3%. Spin valves can be designed with magnetically soft free layers which have a sensitive response to very weak fields (such as those originating from tiny magnetic bits on a computer disk), and have replaced anisotropic magnetoresistance sensors in computer hard disk drive heads since the late 1990s.

Future applications may include a spin-based transistor which requires the development of magnetic semiconductors exhibiting room temperature ferromagnetism. The operation of MRAM or magnetic random access memory is also based on spintronic principles
Materials
Cobalt green has been tested as a possible non-volatile magnetic semiconductor with spintronics applications

External links
Scientific American (2002)
IBM (2003)
Wired: update on MRAMs, 2003 Jul
Spinhenge@home (distributed computing}
Spintronics research targets GaAs.
Retrieved from "http://en.wikipedia.org/wiki/Spintronics"
Category: Electronics

Answer 3

hi thanks 4 d rply. my id is [e-mail].