科技英文翻譯 《英翻中》

Question

2 - 2
Nowadays, most transistors are made from silicon. Bipolar junction transistors
contain a base which is sandwiched between the emitter and the collector. A transistor
is either PNP or NPN type. The first letter indicates the emitter and the emitter
material, the middle letter, the base material and the last letter, the collector material.
PNP or NPN type tells us that transistor consists of two diodes: the emitter-base one
and the collector-base one. The doping extent, the geometry and the fabrication
method decide the characteristic of a bipolar junction transistors (BJT). As a general
rule, the emitter-base diode is forward-biased and the collector-base diode is
reverse-biased. The emitter injects the current carriers. The collector receives most of
the current carriers. The base control the collector current. The emitter current is the
sum of the collector current and current. The electrons in N-type material or the holes
in P-type material, called majority-current carriers, results material, called
majority-current carriers, results in the current flow inside a transistor. There are also
minority-carrier current in the collector-base junction if the emitter is open. It is called
leakage current ICBO which is very small, but it increases with heat and may damage a
transistor unless checked. Transistors are sensitive to heat. Transistor manufacturers
always specify the temperature within which a transistor may be operated safely. The
powers of transistors vary from the very low (50mW) to the high (2W or more). Heat
sinks are always used to conduct the heat away form the high-power transistors.
Always use the low current ranges of an ohmmeter or the diode range of a multimeter
to check transistors because excessive current from the meter may destroy transistors.

Answer 1

現在,大多數的電晶體都是矽作成的,雙極性電晶體包含一個基極用來切換射極到集極的電流,雙極性電晶體有NPN,PNP兩種型態.第一個字母表示射極和其半導體的種類,第二,三個字母表示基,射極和其半導體的種類.PNP 和NPN告訴我們電晶體包含了兩個二極體,射極到基極和集極到基極,參雜雜質,幾合學和架構會決定電晶體的特性,一般的定理是,射-基接面是順向偏壓,集-基接面是逆向偏壓,射極輸入電子載體(就是電子流).集極接受大多數的電子流,基極控制電流的大小,射極電流是所有電流的總合(Ib+Ic).電子在N型半導體或是電洞在P型半導體,稱為多數載子,在電晶體內的電流 也會有少數載子的電流在 集-基極 間流過當射極是開路狀態,被叫做洩漏電流ICBO,是非常小的.但是他會使電晶體發熱,和燒毀電晶體,除非有被檢示.電晶體對熱很敏感電晶體的制照廠商總是把熱效應定義到電晶體去,確保電晶體在安全操作下.電晶體的功率從非常低0.05瓦到2瓦甚至更高,散熱片總是使用在高功率電晶體上把多餘的熱給散發掉通常會使用低電流的歐姆計或是三用電表的二極體檔來看電晶體特性,因為來自量側儀器的大電流可能會損壞電晶體  

Answer 2

現今, 多數晶體管由硅被做。 雙極連接點晶體管
包含將夾在中間在放射器和收藏家之間的一個基地。 一支晶體管
是或PNP 或NPN 類型。 第一信件表明放射器和放射器
材料、中間信件、基本材料和最後信件，收藏家材料。
PNP 或NPN 類型告訴我們, 晶體管包括二個二極管: 放射器基地一個
並且collector-base 一個。 摻雜的程度、幾何和製造
方法決定一個雙極連接點晶體管的特徵(BJT) 。 作為將軍
統治, 放射器基地二極管forward-biased 並且collector-base 二極管是
reverse-biased 。 放射器注射當前的載體。 收藏家接受多數
當前的載體。 基本的控制收藏家潮流。 放射器潮流是
收藏家潮流和潮流的總和。 電子在N 類型材料或孔
在P 類型材料, 叫做多數當前的載體, 結果材料, 叫
多數當前的載體, 導致當前的流程在晶體管裡面。 有並且
少數載體潮流在collector-base 連接點如果放射器是開放。 它叫
非常小的漏出當前的ICBO, 僅它增加以熱, 也許損壞a
晶體管除非檢查。 晶體管對熱是敏感的。 晶體管製造商
總指定之內晶體管也許安全地被管理的溫度在。
晶體管的力量變化從非常低(50mW) 對上流(2W 或更多) 。 熱
水槽總被使用舉辦熱去形式威力強大的晶體管。
總使用歐姆計的低當前的範圍或多用電表的二極管範圍
檢查晶體管因為過份潮流從米也許毀壞晶體管。